Heba S . Mohammad , Heba A . Shawkey , and Adel Ezzat – ELHennawy 130 nm Flat Gain LNA for 6 - 9 GHz UWB Applications
نویسنده
چکیده
144606-7171-IJET-IJENS © December 2014 IJENS I J E N S Abstract— This paper shows the design of a broadband low noise amplifier (LNA) for ultra-wideband (UWB) applications. The proposed LNA uses cascode configuration technique followed by an inductive inter-stage network to realize the flat gain throughout the UWB band. The inductive inter-stage network is cascaded to a common source amplifier with a shunt feedback resistor for further gain flattens. The proposed LNA is designed in the frequency range 6-9 GHz, with a peak gain (S21) 12dB and input return loss (S11) -10 dB. Its noise figure (NF) is less than 2.5 dB, input third-intercept point (IIP3) of 5 dBm, 1dB compression point (P1dB)of -5.85dBm. The proposed LNA is designed using UMC 130nm CMOS technology and consumes 4.8 mW from 1.2V power supply.
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